Organic Single-Crystal Field-Effect Transistors of a Soluble Anthradithiophene

We present the first characterization of single-crystal devices of a new solution processable material that we have previously demonstrated achieves technologically relevant performance in the polycrystalline thin film state. Our studies include growth and investigation of structural, as well as ele...

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Bibliographic Details
Published in:Chemistry of materials 2008-11, Vol.20 (21), p.6733-6737
Main Authors: Jurchescu, Oana D, Subramanian, Sankar, Kline, R. Joseph, Hudson, Steven D, Anthony, John E, Jackson, Thomas N, Gundlach, David J
Format: Article
Language:English
Subjects:
Crystal Growth
Electronic Materials
Semiconductors
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Summary:We present the first characterization of single-crystal devices of a new solution processable material that we have previously demonstrated achieves technologically relevant performance in the polycrystalline thin film state. Our studies include growth and investigation of structural, as well as electronic properties of single crystals of 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT). Field-effect transistors fabricated on the surface of diF-TESADT single crystals exhibit excellent electronic properties: mobility as high as 6 cm2/Vs, large current on/off ratios (I on/I off = 1 × 108), small subthreshold slopes (S = 1 V/dec), and extremely small hysteresis in the current−voltage characteristics. These properties, coupled with solution processability, make diF-TESADT attractive for electronic applications and demonstrate the technological potential of soluble oligomers.
ISSN:0897-4756
1520-5002
DOI:10.1021/cm8021165