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Adsorption of gallane on oxidized silicon

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Published in:Inorganic chemistry 1993-09, Vol.32 (19), p.3985-3986
Main Authors: Butz, Kirk W, Elms, Fiona M, Raston, Colin L, Lamb, Robert N, Pigram, Paul J
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Language:English
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container_end_page 3986
container_issue 19
container_start_page 3985
container_title Inorganic chemistry
container_volume 32
creator Butz, Kirk W
Elms, Fiona M
Raston, Colin L
Lamb, Robert N
Pigram, Paul J
description
doi_str_mv 10.1021/ic00071a003
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fullrecord <record><control><sourceid>istex_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1021_ic00071a003</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ark_67375_TPS_T0FKSZLG_H</sourcerecordid><originalsourceid>FETCH-LOGICAL-a330t-36a3faafbdd212f84244384cb1c99a54425a101aa8f12973ebeed308f246285f3</originalsourceid><addsrcrecordid>eNptz01LAzEQBuAgCq7Vk39gD4KIrE4-9utYim3FBYVWEC9hmk0kdd0tyQrVX2_KSvHgKRPmmWFeQs4p3FBg9NYqAMgpAvADEtGUQZJSeDkkEUCoaZaVx-TE-3VgJRdZRK7Gte_cprddG3cmfsOmwVbHu9_W1vZb17G3jVVde0qODDZen_2-I_I8vVtO5kn1OLufjKsEOYc-4Rlyg2hWdc0oM4VgQvBCqBVVZYmpECxFChSxMJSVOdcrrWsOhWEiY0Vq-IhcD3uV67x32siNsx_oviQFuUsp_6QM-mLQG_QKG-OwVdbvR3ieipIXgSUDs77X230b3bvM8oDk8mkhlzB9WLxWMzkP_nLwqLxcd5-uDZH_PeAHevxrzw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Adsorption of gallane on oxidized silicon</title><source>ACS CRKN Legacy Archives</source><creator>Butz, Kirk W ; Elms, Fiona M ; Raston, Colin L ; Lamb, Robert N ; Pigram, Paul J</creator><creatorcontrib>Butz, Kirk W ; Elms, Fiona M ; Raston, Colin L ; Lamb, Robert N ; Pigram, Paul J</creatorcontrib><identifier>ISSN: 0020-1669</identifier><identifier>EISSN: 1520-510X</identifier><identifier>DOI: 10.1021/ic00071a003</identifier><identifier>CODEN: INOCAJ</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Chemistry ; Exact sciences and technology ; General and physical chemistry ; Solid-gas interface ; Surface physical chemistry</subject><ispartof>Inorganic chemistry, 1993-09, Vol.32 (19), p.3985-3986</ispartof><rights>1994 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a330t-36a3faafbdd212f84244384cb1c99a54425a101aa8f12973ebeed308f246285f3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/ic00071a003$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/ic00071a003$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,27064,27924,27925,56766,56816</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=3754938$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Butz, Kirk W</creatorcontrib><creatorcontrib>Elms, Fiona M</creatorcontrib><creatorcontrib>Raston, Colin L</creatorcontrib><creatorcontrib>Lamb, Robert N</creatorcontrib><creatorcontrib>Pigram, Paul J</creatorcontrib><title>Adsorption of gallane on oxidized silicon</title><title>Inorganic chemistry</title><addtitle>Inorg. Chem</addtitle><subject>Chemistry</subject><subject>Exact sciences and technology</subject><subject>General and physical chemistry</subject><subject>Solid-gas interface</subject><subject>Surface physical chemistry</subject><issn>0020-1669</issn><issn>1520-510X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1993</creationdate><recordtype>article</recordtype><recordid>eNptz01LAzEQBuAgCq7Vk39gD4KIrE4-9utYim3FBYVWEC9hmk0kdd0tyQrVX2_KSvHgKRPmmWFeQs4p3FBg9NYqAMgpAvADEtGUQZJSeDkkEUCoaZaVx-TE-3VgJRdZRK7Gte_cprddG3cmfsOmwVbHu9_W1vZb17G3jVVde0qODDZen_2-I_I8vVtO5kn1OLufjKsEOYc-4Rlyg2hWdc0oM4VgQvBCqBVVZYmpECxFChSxMJSVOdcrrWsOhWEiY0Vq-IhcD3uV67x32siNsx_oviQFuUsp_6QM-mLQG_QKG-OwVdbvR3ieipIXgSUDs77X230b3bvM8oDk8mkhlzB9WLxWMzkP_nLwqLxcd5-uDZH_PeAHevxrzw</recordid><startdate>19930901</startdate><enddate>19930901</enddate><creator>Butz, Kirk W</creator><creator>Elms, Fiona M</creator><creator>Raston, Colin L</creator><creator>Lamb, Robert N</creator><creator>Pigram, Paul J</creator><general>American Chemical Society</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19930901</creationdate><title>Adsorption of gallane on oxidized silicon</title><author>Butz, Kirk W ; Elms, Fiona M ; Raston, Colin L ; Lamb, Robert N ; Pigram, Paul J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a330t-36a3faafbdd212f84244384cb1c99a54425a101aa8f12973ebeed308f246285f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1993</creationdate><topic>Chemistry</topic><topic>Exact sciences and technology</topic><topic>General and physical chemistry</topic><topic>Solid-gas interface</topic><topic>Surface physical chemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Butz, Kirk W</creatorcontrib><creatorcontrib>Elms, Fiona M</creatorcontrib><creatorcontrib>Raston, Colin L</creatorcontrib><creatorcontrib>Lamb, Robert N</creatorcontrib><creatorcontrib>Pigram, Paul J</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Inorganic chemistry</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Butz, Kirk W</au><au>Elms, Fiona M</au><au>Raston, Colin L</au><au>Lamb, Robert N</au><au>Pigram, Paul J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Adsorption of gallane on oxidized silicon</atitle><jtitle>Inorganic chemistry</jtitle><addtitle>Inorg. Chem</addtitle><date>1993-09-01</date><risdate>1993</risdate><volume>32</volume><issue>19</issue><spage>3985</spage><epage>3986</epage><pages>3985-3986</pages><issn>0020-1669</issn><eissn>1520-510X</eissn><coden>INOCAJ</coden><cop>Washington, DC</cop><pub>American Chemical Society</pub><doi>10.1021/ic00071a003</doi><tpages>2</tpages></addata></record>
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ispartof Inorganic chemistry, 1993-09, Vol.32 (19), p.3985-3986
issn 0020-1669
1520-510X
language eng
recordid cdi_crossref_primary_10_1021_ic00071a003
source ACS CRKN Legacy Archives
subjects Chemistry
Exact sciences and technology
General and physical chemistry
Solid-gas interface
Surface physical chemistry
title Adsorption of gallane on oxidized silicon
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T09%3A21%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-istex_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Adsorption%20of%20gallane%20on%20oxidized%20silicon&rft.jtitle=Inorganic%20chemistry&rft.au=Butz,%20Kirk%20W&rft.date=1993-09-01&rft.volume=32&rft.issue=19&rft.spage=3985&rft.epage=3986&rft.pages=3985-3986&rft.issn=0020-1669&rft.eissn=1520-510X&rft.coden=INOCAJ&rft_id=info:doi/10.1021/ic00071a003&rft_dat=%3Cistex_cross%3Eark_67375_TPS_T0FKSZLG_H%3C/istex_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-a330t-36a3faafbdd212f84244384cb1c99a54425a101aa8f12973ebeed308f246285f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true