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Effect of Low Aluminum Silicon on the Direct Process
GE Silicones ran a commercial direct process production unit with low aluminum content silicon, and very poor reaction yields were obtained. The direct process is used to react silicon with methyl chloride to produce methylchlorosilanes, which are used to produce silicone materials. Laboratory exper...
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Published in: | Industrial & engineering chemistry research 2003-07, Vol.42 (15), p.3555-3565 |
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creator | Bablin, J. M Crawford, A. C DeMoulpied, D. C Lewis, L. N |
description | GE Silicones ran a commercial direct process production unit with low aluminum content silicon, and very poor reaction yields were obtained. The direct process is used to react silicon with methyl chloride to produce methylchlorosilanes, which are used to produce silicone materials. Laboratory experiments were conducted that allowed GE to generate a plausible hypothesis to explain the commercial failure. The commercial and laboratory results have been used by GE to diagnose additional direct process reaction problems. Aluminum is an important impurity found in chemical-grade silicon. Aluminum acts as one of many promoters in the direct process. Laboratory experiments indicated that the presence of aluminum is required to increase the vapor pressure of the zinc promoter at direct process reaction conditions. Increased vapor pressure allows movement of zinc within the solid reaction mass present in the fluid-bed reactor. Insufficient zinc vapor pressure causes severe problems with raw material yields and product quality that translates to uneconomic operation of the commercial direct process reaction unit. |
doi_str_mv | 10.1021/ie020334s |
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fullrecord | <record><control><sourceid>acs_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1021_ie020334s</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>f71771105</sourcerecordid><originalsourceid>FETCH-LOGICAL-a362t-259ea2142e98cf2ef693fc4f8b7c4a91681835104aae963f8c8d6e0820dd83553</originalsourceid><addsrcrecordid>eNptj8tKAzEUhoMoOFYXvsFsXLgYPbk2WZZabxQstIq4CTFNMHUuJZlBfXunVNqNcOAs_u_8hw-hcwxXGAi-Dg4IUMrSAcowJ1BwYPwQZSClLLiU_BidpLQCAM4ZyxCbeO9smzc-nzZf-ajsqlB3VT4PZbBNnffTfrj8JsQNNYuNdSmdoiNvyuTO_vYAPd9OFuP7Yvp09zAeTQtDBWkLwpUzBDPilLSeOC8U9ZZ5-T60zCgsJJaUY2DGOCWol1YuhQNJYLnsA04H6HLba2OTUnRer2OoTPzRGPRGV-90e_Ziy65Nsqb00dQ2pP0BU0pRTnqu2HIhte57l5v4qcWQDrlezOaavNEX_Dh71Wzfa2zSq6aLdW_8z_9fNFtt5g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effect of Low Aluminum Silicon on the Direct Process</title><source>American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list)</source><creator>Bablin, J. M ; Crawford, A. C ; DeMoulpied, D. C ; Lewis, L. N</creator><creatorcontrib>Bablin, J. M ; Crawford, A. C ; DeMoulpied, D. C ; Lewis, L. N</creatorcontrib><description>GE Silicones ran a commercial direct process production unit with low aluminum content silicon, and very poor reaction yields were obtained. The direct process is used to react silicon with methyl chloride to produce methylchlorosilanes, which are used to produce silicone materials. Laboratory experiments were conducted that allowed GE to generate a plausible hypothesis to explain the commercial failure. The commercial and laboratory results have been used by GE to diagnose additional direct process reaction problems. Aluminum is an important impurity found in chemical-grade silicon. Aluminum acts as one of many promoters in the direct process. Laboratory experiments indicated that the presence of aluminum is required to increase the vapor pressure of the zinc promoter at direct process reaction conditions. Increased vapor pressure allows movement of zinc within the solid reaction mass present in the fluid-bed reactor. Insufficient zinc vapor pressure causes severe problems with raw material yields and product quality that translates to uneconomic operation of the commercial direct process reaction unit.</description><identifier>ISSN: 0888-5885</identifier><identifier>EISSN: 1520-5045</identifier><identifier>DOI: 10.1021/ie020334s</identifier><identifier>CODEN: IECRED</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Catalysis ; Catalytic reactions ; Chemistry ; Exact sciences and technology ; General and physical chemistry ; Kinetics and mechanisms ; Organic chemistry ; Reactivity and mechanisms ; Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry</subject><ispartof>Industrial & engineering chemistry research, 2003-07, Vol.42 (15), p.3555-3565</ispartof><rights>Copyright © 2003 American Chemical Society</rights><rights>2003 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a362t-259ea2142e98cf2ef693fc4f8b7c4a91681835104aae963f8c8d6e0820dd83553</citedby><cites>FETCH-LOGICAL-a362t-259ea2142e98cf2ef693fc4f8b7c4a91681835104aae963f8c8d6e0820dd83553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14999352$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bablin, J. M</creatorcontrib><creatorcontrib>Crawford, A. C</creatorcontrib><creatorcontrib>DeMoulpied, D. C</creatorcontrib><creatorcontrib>Lewis, L. N</creatorcontrib><title>Effect of Low Aluminum Silicon on the Direct Process</title><title>Industrial & engineering chemistry research</title><addtitle>Ind. Eng. Chem. Res</addtitle><description>GE Silicones ran a commercial direct process production unit with low aluminum content silicon, and very poor reaction yields were obtained. The direct process is used to react silicon with methyl chloride to produce methylchlorosilanes, which are used to produce silicone materials. Laboratory experiments were conducted that allowed GE to generate a plausible hypothesis to explain the commercial failure. The commercial and laboratory results have been used by GE to diagnose additional direct process reaction problems. Aluminum is an important impurity found in chemical-grade silicon. Aluminum acts as one of many promoters in the direct process. Laboratory experiments indicated that the presence of aluminum is required to increase the vapor pressure of the zinc promoter at direct process reaction conditions. Increased vapor pressure allows movement of zinc within the solid reaction mass present in the fluid-bed reactor. Insufficient zinc vapor pressure causes severe problems with raw material yields and product quality that translates to uneconomic operation of the commercial direct process reaction unit.</description><subject>Catalysis</subject><subject>Catalytic reactions</subject><subject>Chemistry</subject><subject>Exact sciences and technology</subject><subject>General and physical chemistry</subject><subject>Kinetics and mechanisms</subject><subject>Organic chemistry</subject><subject>Reactivity and mechanisms</subject><subject>Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry</subject><issn>0888-5885</issn><issn>1520-5045</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><recordid>eNptj8tKAzEUhoMoOFYXvsFsXLgYPbk2WZZabxQstIq4CTFNMHUuJZlBfXunVNqNcOAs_u_8hw-hcwxXGAi-Dg4IUMrSAcowJ1BwYPwQZSClLLiU_BidpLQCAM4ZyxCbeO9smzc-nzZf-ajsqlB3VT4PZbBNnffTfrj8JsQNNYuNdSmdoiNvyuTO_vYAPd9OFuP7Yvp09zAeTQtDBWkLwpUzBDPilLSeOC8U9ZZ5-T60zCgsJJaUY2DGOCWol1YuhQNJYLnsA04H6HLba2OTUnRer2OoTPzRGPRGV-90e_Ziy65Nsqb00dQ2pP0BU0pRTnqu2HIhte57l5v4qcWQDrlezOaavNEX_Dh71Wzfa2zSq6aLdW_8z_9fNFtt5g</recordid><startdate>20030723</startdate><enddate>20030723</enddate><creator>Bablin, J. M</creator><creator>Crawford, A. C</creator><creator>DeMoulpied, D. C</creator><creator>Lewis, L. N</creator><general>American Chemical Society</general><scope>BSCLL</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20030723</creationdate><title>Effect of Low Aluminum Silicon on the Direct Process</title><author>Bablin, J. M ; Crawford, A. C ; DeMoulpied, D. C ; Lewis, L. N</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a362t-259ea2142e98cf2ef693fc4f8b7c4a91681835104aae963f8c8d6e0820dd83553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Catalysis</topic><topic>Catalytic reactions</topic><topic>Chemistry</topic><topic>Exact sciences and technology</topic><topic>General and physical chemistry</topic><topic>Kinetics and mechanisms</topic><topic>Organic chemistry</topic><topic>Reactivity and mechanisms</topic><topic>Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bablin, J. M</creatorcontrib><creatorcontrib>Crawford, A. C</creatorcontrib><creatorcontrib>DeMoulpied, D. C</creatorcontrib><creatorcontrib>Lewis, L. N</creatorcontrib><collection>Istex</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Industrial & engineering chemistry research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bablin, J. M</au><au>Crawford, A. C</au><au>DeMoulpied, D. C</au><au>Lewis, L. N</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Low Aluminum Silicon on the Direct Process</atitle><jtitle>Industrial & engineering chemistry research</jtitle><addtitle>Ind. Eng. Chem. Res</addtitle><date>2003-07-23</date><risdate>2003</risdate><volume>42</volume><issue>15</issue><spage>3555</spage><epage>3565</epage><pages>3555-3565</pages><issn>0888-5885</issn><eissn>1520-5045</eissn><coden>IECRED</coden><abstract>GE Silicones ran a commercial direct process production unit with low aluminum content silicon, and very poor reaction yields were obtained. The direct process is used to react silicon with methyl chloride to produce methylchlorosilanes, which are used to produce silicone materials. Laboratory experiments were conducted that allowed GE to generate a plausible hypothesis to explain the commercial failure. The commercial and laboratory results have been used by GE to diagnose additional direct process reaction problems. Aluminum is an important impurity found in chemical-grade silicon. Aluminum acts as one of many promoters in the direct process. Laboratory experiments indicated that the presence of aluminum is required to increase the vapor pressure of the zinc promoter at direct process reaction conditions. Increased vapor pressure allows movement of zinc within the solid reaction mass present in the fluid-bed reactor. Insufficient zinc vapor pressure causes severe problems with raw material yields and product quality that translates to uneconomic operation of the commercial direct process reaction unit.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><doi>10.1021/ie020334s</doi><tpages>11</tpages></addata></record> |
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subjects | Catalysis Catalytic reactions Chemistry Exact sciences and technology General and physical chemistry Kinetics and mechanisms Organic chemistry Reactivity and mechanisms Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry |
title | Effect of Low Aluminum Silicon on the Direct Process |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T16%3A00%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-acs_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20Low%20Aluminum%20Silicon%20on%20the%20Direct%20Process&rft.jtitle=Industrial%20&%20engineering%20chemistry%20research&rft.au=Bablin,%20J.%20M&rft.date=2003-07-23&rft.volume=42&rft.issue=15&rft.spage=3555&rft.epage=3565&rft.pages=3555-3565&rft.issn=0888-5885&rft.eissn=1520-5045&rft.coden=IECRED&rft_id=info:doi/10.1021/ie020334s&rft_dat=%3Cacs_cross%3Ef71771105%3C/acs_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-a362t-259ea2142e98cf2ef693fc4f8b7c4a91681835104aae963f8c8d6e0820dd83553%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |