Mechanism of Growth of the Ge Wetting Layer Upon Exposure of Si(100)-2 × 1 to GeH 4

Saved in:
Bibliographic Details
Published in:Journal of the American Chemical Society 2008-04, Vol.130 (16), p.5440-5442
Main Authors: Liu, Chie-Sheng, Chou, Li-Wei, Hong, Lu-Sheng, Jiang, Jyh-Chiang
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0002-7863
1520-5126
DOI:10.1021/ja710802s