Geometric and Electronic Structures of Terbium−Silicon Mixed Clusters (TbSi n ; 6 ≤ n ≤ 16)

• Published in: The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory Molecules, spectroscopy, kinetics, environment, & general theory, 2002-04, Vol.106 (15), p.3702-3705
• Main Authors: Ohara, M, Miyajima, K, Pramann, A, Nakajima, A, Kaya, K
• Format: Article
• Language: English
• ISSN: 1089-5639; 1520-5215
• DOI: 10.1021/jp012952c

The geometric and the electronic structures of terbium−silicon anions, TbSi n - (6 ≤ n ≤ 16) were investigated by using photoelectron spectroscopy (PES) and a chemical-probe method. The clusters were produced by a double-rod laser vaporization technique. From trends observed in the electron affinities (EAs), the TbSi n - clusters were categorized into three groups of (I) 6 ≤ n ≤ 9, (II) n = 10, 11, and (III) n ≥ 12. Together with adsorption reactivity toward H2O it is concluded that a Tb atom is encapsulated inside a Si n cage at n ≥ 10; Tb@Si n .