Microwave Reflectance Studies of Photoelectrochemical Kinetics at Semiconductor Electrodes. 1. Steady-State, Transient, and Periodic Responses

Light- and voltage-induced changes in the microwave reflectivity of semiconductors can be used to study the kinetics and mechanisms of electron transfer at semiconductor|electrolyte interfaces. The theory of the method is developed and illustrated by numerical calculations of the steady-state microw...

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Bibliographic Details
Published in:The journal of physical chemistry. B 2003-06, Vol.107 (24), p.5857-5863
Main Authors: Cass, Michael J, Duffy, Noel W, Peter, Laurence M, Pennock, Stephen R, Ushiroda, Shin, Walker, Alison B
Format: Article
Language:English
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Summary:Light- and voltage-induced changes in the microwave reflectivity of semiconductors can be used to study the kinetics and mechanisms of electron transfer at semiconductor|electrolyte interfaces. The theory of the method is developed and illustrated by numerical calculations of the steady-state microwave response for low-doped silicon. The results define the range of rate constants that should be experimentally accessible using microwave reflectivity methods. The time and frequency responses of light-induced microwave reflectivity changes are considered, and it is shown that they can be used to derive values of electron transfer and recombination rate constants.
ISSN:1520-6106
1520-5207
DOI:10.1021/jp030088d