Production of Nitrogen-Doped Graphene by Low-Energy Nitrogen Implantation

Nitrogen doping of graphene is a suitable route to tune the electronic structure of graphene, leading to n-type conductive materials. Herein, we report a simple way to insert nitrogen atoms into graphene by low-energy nitrogen bombardment, forming nitrogen-doped graphene. The formation of nitrogen-d...

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Bibliographic Details
Published in:Journal of physical chemistry. C 2012-03, Vol.116 (8), p.5062-5066
Main Authors: Zhao, W, Höfert, O, Gotterbarm, K, Zhu, J.F, Papp, C, Steinrück, H.-P
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in other materials
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Summary:Nitrogen doping of graphene is a suitable route to tune the electronic structure of graphene, leading to n-type conductive materials. Herein, we report a simple way to insert nitrogen atoms into graphene by low-energy nitrogen bombardment, forming nitrogen-doped graphene. The formation of nitrogen-doped graphene is investigated with high resolution X-ray photoelectron spectroscopy, allowing to determine the doping level and to identify two different carbon–nitrogen species. By application of different ion implantation energies and times, we demonstrate that a doping level of up to 0.05 monolayers is achievable and that the branching ratio of the two nitrogen species can be varied.
ISSN:1932-7447
1932-7455
DOI:10.1021/jp209927m