Tuning Electrical and Optoelectronic Properties of Single Cadmium Telluride Nanoribbon

Cadmium telluride nanoribbons were synthesized electrochemically and formed into nanodevices using lithographically patterned nanowire electrodeposition (LPNE) that integrated synthesis and device fabrication together. By controlling the composition of the CdTe nanoribbons via adjusting the electrod...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physical chemistry. C 2012-04, Vol.116 (16), p.9202-9208
Main Authors: Kum, Maxwell C, Jung, Hyunsung, Chartuprayoon, Nicha, Chen, Wilfred, Mulchandani, Ashok, Myung, Nosang V
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Cadmium telluride nanoribbons were synthesized electrochemically and formed into nanodevices using lithographically patterned nanowire electrodeposition (LPNE) that integrated synthesis and device fabrication together. By controlling the composition of the CdTe nanoribbons via adjusting the electrodeposition potential, electrical properties (i.e., electrical resistivity and field-effect transistor (FET) mobility) and optoelectronic property (photocurrent) were tuned and compared. Electrical resistivity of CdTe nanoribbons was strongly dependent on the Te content as higher Te content provided higher carrier concentration. Electrical conduction was limited by grain boundary traps due to polycrystalline structure. FET mobility was correlated to electrical resistivity and photocurrent, and annealed samples showed improved FET mobility, electrical resistivity, and photocurrent response.
ISSN:1932-7447
1932-7455
DOI:10.1021/jp300071g