Solution-Processed High-Detectivity Near-Infrared Polymer Photodetectors Fabricated by a Novel Low-Bandgap Semiconducting Polymer

High-detectivity near-infrared (NIR) polymer photodetectors (PDs) fabricated by a novel low-bandgap semiconducting polymer blended with fullerene derivatives are reported. Operating at room temperature, the polymer PDs have a spectral response from 400 to 1100 nm. By incorporation of an alcohol/wate...

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Bibliographic Details
Published in:Journal of physical chemistry. C 2013-04, Vol.117 (13), p.6537-6543
Main Authors: Hu, Xiaowen, Dong, Yang, Huang, Fei, Gong, Xiong, Cao, Yong
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:High-detectivity near-infrared (NIR) polymer photodetectors (PDs) fabricated by a novel low-bandgap semiconducting polymer blended with fullerene derivatives are reported. Operating at room temperature, the polymer PDs have a spectral response from 400 to 1100 nm. By incorporation of an alcohol/water-soluble polymer as a cathode interlayer in bulk heterojunction polymer PDs, the polymer PDs exhibit a high detectivity of 1.75 × 1013 cm•Hz1/2/W at 800 nm. These results demonstrated that the NIR polymer PDs are comparable to Si-based PDs.
ISSN:1932-7447
1932-7455
DOI:10.1021/jp4001237