Spectral Diversity in Raman G-band Modes of Metallic Carbon Nanotubes within a Single Chirality

• Published in: Journal of physical chemistry. C 2008-08, Vol.112 (33), p.13017-13023
• Main Authors: Shim, Moonsub, Gaur, Anshu, Nguyen, Khoi T, Abdula, Daner, Ozel, Taner
• Format: Article
• Language: English
• Subjects: C: Electron Transport, Optical and Electronic Devices, Hard Matter
• ISSN: 1932-7447; 1932-7455
• DOI: 10.1021/jp8050092

Diversity in the Raman G-band phonon modes within individual metallic carbon nanotubes of the same chirality is examined. Comparisons between Raman spectra of as-synthesized nanotubes with those obtained under electrochemical gate potential are made. We show that most of the distribution in line width and peak position of the G-band modes within a single chirality type can be explained by variations in where the Fermi level lies with respect to the band crossing point (i.e., where the nanotube is at zero charge). Varying degree of charge transfer from adsorbed O2 is likely to be the main source of ∼2 eV or larger range of Fermi level positions. On average, the Fermi level of individual metallic nanotubes lies on the order of 1 eV below the band crossing point. Both charge transfer and physical disorder are evident upon O2 adsorption. Implications of these findings on electron−phonon coupling and charge transfer processes are discussed.