High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction

Undoped n-ZnO films have been deposited onto p-GaN to form a pn heterojunction, and the current−voltage curve of the heterojunction shows obvious rectifying behaviors. A photodetector is fabricated from the heterojunction. Under back-illumination conditions, the GaN layer on one hand acts as a p-typ...

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Bibliographic Details
Published in:Journal of physical chemistry. C 2008-12, Vol.112 (51), p.20546-20548
Main Authors: Zhu, H, Shan, C. X, Yao, B, Li, B. H, Zhang, J. Y, Zhao, D. X, Shen, D. Z, Fan, X. W
Format: Article
Language:English
Subjects:
C: Electron Transport, Optical and Electronic Devices, Hard Matter
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Summary:Undoped n-ZnO films have been deposited onto p-GaN to form a pn heterojunction, and the current−voltage curve of the heterojunction shows obvious rectifying behaviors. A photodetector is fabricated from the heterojunction. Under back-illumination conditions, the GaN layer on one hand acts as a p-type counterpart for the n-ZnO layer, on the other hand as a “filter” that is transparent to the illumination light with wavelength longer than 360 nm. Because of the GaN “filter”, the photodetector shows a narrow band-pass response of only 17 nm in width. The results reported in this paper may provide a facile route to photodetectors with high spectrum selectivity.
ISSN:1932-7447
1932-7455
DOI:10.1021/jp808870z