Chemically Gated Quantum-Interference-Based Molecular Transistor

This Letter proposes a realistic design of a single-molecule quantum-interference-based transistor. The transistor consists of a cross-conjugated donor–bridge–acceptor molecule and is chemically gated by a functional group that can be charged. Numerical simulations indicate that the device propertie...

Full description

Saved in:
Bibliographic Details
Published in:The journal of physical chemistry letters 2011-07, Vol.2 (14), p.1753-1756
Main Authors: Kocherzhenko, Aleksey A, Siebbeles, Laurens D. A, Grozema, Ferdinand C
Format: Article
Language:English
Subjects:
Electron Transport, Optical and Electronic Devices, Hard Matter
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This Letter proposes a realistic design of a single-molecule quantum-interference-based transistor. The transistor consists of a cross-conjugated donor–bridge–acceptor molecule and is chemically gated by a functional group that can be charged. Numerical simulations indicate that the device properties can be tuned to desired specifications by the choice of its constituting functional groups. The transistor does not require external contacts to control its operation. However, it can be chemically functionalized for easy integration into molecular electonic circuits, especially because its operation does not involve any conformational changes in the molecule. The upper operational frequency limit of the proposed device is found to be in the terahertz range.
ISSN:1948-7185
1948-7185
DOI:10.1021/jz200535j