Laser Activation Modification of Semiconductor Surfaces (LAMSS)

In this letter, we report a new and extremely rapid technique for surface modification, which we term laser activation modification of semiconductor surfaces or LAMSS. This method consists of wetting a semiconductor surface (e.g., silicon or germanium) with a reactive compound and then firing a high...

Full description

Saved in:
Bibliographic Details
Published in:Langmuir 2006-12, Vol.22 (26), p.10859-10863
Main Authors: Zhang, Feng, Pei, Lei, Bennion, Eliot, Jiang, Guilin, Connley, David, Yang, Li, Lee, Michael V, Davis, Robert C, Smentkowski, Vincent S, Strossman, Greg, Linford, Matthew R, Asplund, Matthew C
Format: Article
Language:English
Subjects:
Chemistry
Exact sciences and technology
General and physical chemistry
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this letter, we report a new and extremely rapid technique for surface modification, which we term laser activation modification of semiconductor surfaces or LAMSS. This method consists of wetting a semiconductor surface (e.g., silicon or germanium) with a reactive compound and then firing a highly focused nanosecond pulse of laser light through the transparent liquid onto the surface. The high peak power of the pulse at the surface activates the surface so that it reacts with the liquid with which it is in contact. Evidence for functionalization of the spots is given by ToF-SIMS imaging and small-spot XPS.
ISSN:0743-7463
1520-5827
DOI:10.1021/la060562h