Influence of Quantum Confinement on the Electronic and Magnetic Properties of (Ga,Mn)As Diluted Magnetic Semiconductor

We investigate the effect of quantum confinement on the electronic structure of diluted magnetic semiconductor Ga1 - x Mn x As using a combination of tight-binding and density functional methods. We observe half metallic behavior in the clusters as well as a strong majority-spin Mn d−As p hybridizat...

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Bibliographic Details
Published in:Nano letters 2002-06, Vol.2 (6), p.605-608
Main Authors: Sapra, Sameer, Sarma, D. D, Sanvito, S, Hill, N. A
Format: Article
Language:English
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Summary:We investigate the effect of quantum confinement on the electronic structure of diluted magnetic semiconductor Ga1 - x Mn x As using a combination of tight-binding and density functional methods. We observe half metallic behavior in the clusters as well as a strong majority-spin Mn d−As p hybridization down to sizes as small as 20 Å in diameter. Below this size, the doped holes are significantly self-trapped by the Mn sites, signaling both valence and electronic transitions. Our results imply that magnetically doped III−V nanoparticles will provide a medium for manipulating the electronic structure of dilute magnetic semiconductors while conserving the magnetic properties and even enhancing them in certain size regimes.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl025516q