High-Mobility Nanotube Transistor Memory

A high-mobility (9000 cm2/V·s) semiconducting single-walled nanotube transistor is used to construct a nonvolatile charge-storage memory element operating at room temperature. Charges are stored by application of a few volts across the silicon dioxide dielectric between nanotube and silicon substrat...

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Bibliographic Details
Published in:Nano letters 2002-07, Vol.2 (7), p.755-759
Main Authors: Fuhrer, M. S, Kim, B. M, Dürkop, T, Brintlinger, T
Format: Article
Language:English
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Summary:A high-mobility (9000 cm2/V·s) semiconducting single-walled nanotube transistor is used to construct a nonvolatile charge-storage memory element operating at room temperature. Charges are stored by application of a few volts across the silicon dioxide dielectric between nanotube and silicon substrate, and detected by threshold shift of the nanotube field-effect transistor. The high mobility of the nanotube transistor allows the observation of discrete configurations of charge corresponding to rearrangement of a single or few electrons. These states may be reversibly written, read, and erased at temperatures up to 100 K.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl025577o