Control of Multiwalled Carbon Nanotube Diameter by Selective Growth on the Exposed Edge of a Thin Film Multilayer Structure

Selective area growth of carbon nanotubes (CNT) has been used to control the diameter of CNTs. Narrow lines of SiO2 (12−60 nm) are formed at the cleaved face of a Si/SiO2/Si multilayer structure. CNTs are then grown by a chemical vapor deposition process with a ferrocene/xylene/H2/Ar mixture at 700...

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Bibliographic Details
Published in:Nano letters 2002-10, Vol.2 (10), p.1177-1181
Main Authors: Chopra, Nitin, Kichambare, Padmakar D, Andrews, Rodney, Hinds, Bruce J
Format: Article
Language:English
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Summary:Selective area growth of carbon nanotubes (CNT) has been used to control the diameter of CNTs. Narrow lines of SiO2 (12−60 nm) are formed at the cleaved face of a Si/SiO2/Si multilayer structure. CNTs are then grown by a chemical vapor deposition process with a ferrocene/xylene/H2/Ar mixture at 700 °C. CNTs are observed to grow only on the exposed SiO2 surface at the edge of the “mesa” structure with a diameter equal to the thickness of the SiO2 layer.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl0257061