Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

We present a complete fabrication process for the creation of robust nano-and atomic-scale devices in silicon using a scanning tunneling microscope (STM). In particular we develop registration markers which, in combination with a custom-designed STM-scanning electron microscope (SEM) system, solve o...

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Bibliographic Details
Published in:Nano letters 2004-10, Vol.4 (10), p.1969-1973
Main Authors: Ruess, Frank J, Oberbeck, Lars, Simmons, Michelle Y, Goh, Kuan Eng J, Hamilton, Alex R, Hallam, Toby, Schofield, Steven R, Curson, Neil J, Clark, Robert G
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Electron, ion, and scanning probe microscopy
Exact sciences and technology
Growth from vapor
Materials science
Methods of crystal growth
physics of crystal growth
Physics
Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc
Structure of solids and liquids
crystallography
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Summary:We present a complete fabrication process for the creation of robust nano-and atomic-scale devices in silicon using a scanning tunneling microscope (STM). In particular we develop registration markers which, in combination with a custom-designed STM-scanning electron microscope (SEM) system, solve one of the key fabrication problems − connecting the STM-patterned buried phosphorus-doped devices, fabricated in the ultrahigh vacuum environment, to the outside world. The first devices demonstrate the feasibility of this technology and confirm the presence of quantum confinement in devices as electron propagation is laterally constricted by STM patterning.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl048808v