Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy

• Published in: Nano letters 2004-10, Vol.4 (10), p.1969-1973
• Main Authors: Ruess, Frank J, Oberbeck, Lars, Simmons, Michelle Y, Goh, Kuan Eng J, Hamilton, Alex R, Hallam, Toby, Schofield, Steven R, Curson, Neil J, Clark, Robert G
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Electron, ion, and scanning probe microscopy; Exact sciences and technology; Growth from vapor; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc; Structure of solids and liquids; crystallography
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl048808v

We present a complete fabrication process for the creation of robust nano-and atomic-scale devices in silicon using a scanning tunneling microscope (STM). In particular we develop registration markers which, in combination with a custom-designed STM-scanning electron microscope (SEM) system, solve one of the key fabrication problems − connecting the STM-patterned buried phosphorus-doped devices, fabricated in the ultrahigh vacuum environment, to the outside world. The first devices demonstrate the feasibility of this technology and confirm the presence of quantum confinement in devices as electron propagation is laterally constricted by STM patterning.