Self-Aligned, Gated Arrays of Individual Nanotube and Nanowire Emitters

We demonstrate the production of integrated-gate nanocathodes which have a single carbon nanotube or silicon nanowire/whisker per gate aperture. The fabrication is based on a technologically scalable, self-alignment process in which a single lithographic step is used to define the gate, insulator, a...

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Bibliographic Details
Published in:Nano letters 2004-09, Vol.4 (9), p.1575-1579
Main Authors: Gangloff, L, Minoux, E, Teo, K. B. K, Vincent, P, Semet, V. T, Binh, V. T, Yang, M. H, Bu, I. Y. Y, Lacerda, R. G, Pirio, G, Schnell, J. P, Pribat, D, Hasko, D. G, Amaratunga, G. A. J, Milne, W. I, Legagneux, P
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of nanofabrication
Nanolithography
Nanoscale materials and structures: fabrication and characterization
Nanotubes
Physics
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Summary:We demonstrate the production of integrated-gate nanocathodes which have a single carbon nanotube or silicon nanowire/whisker per gate aperture. The fabrication is based on a technologically scalable, self-alignment process in which a single lithographic step is used to define the gate, insulator, and emitter. The nanotube-based gated nanocathode array has a low turn-on voltage of 25 V and a peak current of 5 μA at 46 V, with a gate current of 10 nA (i.e., 99% transparency). These low operating voltage cathodes are potentially useful as electron sources for field emission displays or miniaturizing electron-based instrumentation.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl049401t