High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

• Published in: Nano letters 2004-06, Vol.4 (6), p.1059-1062
• Main Authors: Kim, Hwa-Mok, Cho, Yong-Hoon, Lee, Hosang, Kim, Suk Il, Ryu, Sung Ryong, Kim, Deuk Young, Kang, Tae Won, Chung, Kwan Soo
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronics; Exact sciences and technology; Light-emitting devices; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Optoelectronic devices; Physics; Quantum wells; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl049615a

We demonstrate the realization of the high-brightness and high-efficiency light emitting diodes (LEDs) using dislocation-free indium gallium nitride (InGaN)/gallium nitride (GaN) multiquantum-well (MQW) nanorod (NR) arrays by metal organic-hydride vapor phase epitaxy (MO−HVPE). MQW NR arrays (NRAs) on sapphire substrate are buried in spin-on glass (SOG) to isolating individual NRs and to bring p-type NRs in contact with p-type electrodes. The MQW NRA LEDs have similar electrical characteristics to conventional broad area (BA) LEDs. However, due to the lack of dislocations and the large surface areas provided by the sidewalls of NRs, both internal and extraction efficiencies are significantly enhanced. At 20 mA dc current, the MQW NRA LEDs emit about 4.3 times more light than the conventional BA LEDs, even though overall active volume of the MQW NRA LEDs is much smaller than conventional LEDs. Moreover, the fabrication processes involved in producing MQW NRA LEDs are almost the same for conventional BA LEDs. It is, thus, not surprising that the total yield of these MQW NRA LEDs is essentially the same as that of conventional BA LEDs. The present method of utilizing dislocation-free MQW NRA LEDs is applicable to super-bright white LEDs as well as other semiconductor LEDs for improving total external efficiency and brightness of LEDs.