Single Wall Carbon Nanotubes for p-Type Ohmic Contacts to GaN Light-Emitting Diodes

Homogeneous films of pure single wall carbon nanotubes (SWNTs) sufficiently thin to be optically transparent in the visible range of the spectrum were employed as p-Ohmic contacts on GaN−InGaN quantum-well light-emitting diodes. The specific contact resistance of the SWNT films on the p-GaN was 1.1...

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Bibliographic Details
Published in:Nano letters 2004-05, Vol.4 (5), p.911-914
Main Authors: Lee, K, Wu, Z, Chen, Z, Ren, F, Pearton, S. J, Rinzler, A. G
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Light-emitting devices
Materials science
Nanoscale materials and structures: fabrication and characterization
Nanotubes
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Homogeneous films of pure single wall carbon nanotubes (SWNTs) sufficiently thin to be optically transparent in the visible range of the spectrum were employed as p-Ohmic contacts on GaN−InGaN quantum-well light-emitting diodes. The specific contact resistance of the SWNT films on the p-GaN was 1.1 × 10-2 Ω cm2 after annealing at 700 °C for 60 s under N2, which was a factor of 3 lower than standard Ni/Au contacts on the same p-GaN. The SWNT-contacted LEDs showed bright blue emission centered at 434 nm and demonstrate that the SWNT films provide a new class of electrically conducting, p-type, transparent electrode for use with photonic devices.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl0496522