Ambipolar-to-Unipolar Conversion of Carbon Nanotube Transistors by Gate Structure Engineering

The switching behavior of carbon nanotube field-effect transistors (CNFETs) can be improved by decreasing the gate oxide thickness. However, decreasing the oxide thickness also results in more pronounced ambipolar transistor characteristics and higher off-currents. To achieve high-performance unipol...

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Bibliographic Details
Published in:Nano letters 2004-05, Vol.4 (5), p.947-950
Main Authors: Lin, Yu-Ming, Appenzeller, Joerg, Avouris, Phaedon
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Field effect devices
Materials science
Nanoscale materials and structures: fabrication and characterization
Nanotubes
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:The switching behavior of carbon nanotube field-effect transistors (CNFETs) can be improved by decreasing the gate oxide thickness. However, decreasing the oxide thickness also results in more pronounced ambipolar transistor characteristics and higher off-currents. To achieve high-performance unipolar CNFETs as required for CMOS logic gates, we have fabricated partially gated CNFETs with an asymmetric gate structure with respect to the source and drain electrodes. With our gate structure engineering concept, p-type CNFETs have been fabricated from an ambipolar CNFET. It is also found that fringing fields from source and drain are important in determining the CNFET behavior as the device size decreases.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl049745j