Direct Integration of Metal Oxide Nanowire in Vertical Field-Effect Transistor

We demonstrate seamless direct integration of a semiconductor nanowire grown using a bottom-up approach to obtain a vertical field-effect transistor (VFET). We first synthesize single crystalline semiconductor indium oxide (In2O3) nanowires projecting vertically and uniformly on a nonconducting opti...

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Bibliographic Details
Published in:Nano letters 2004-04, Vol.4 (4), p.651-657
Main Authors: Nguyen, Pho, Ng, Hou T, Yamada, Toshishige, Smith, Michael K, Li, Jun, Han, Jie, Meyyappan, M
Format: Article
Language:English
Subjects:
Applied sciences
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Field effect devices
Materials science
Nanoscale materials and structures: fabrication and characterization
Physics
Quantum wires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:We demonstrate seamless direct integration of a semiconductor nanowire grown using a bottom-up approach to obtain a vertical field-effect transistor (VFET). We first synthesize single crystalline semiconductor indium oxide (In2O3) nanowires projecting vertically and uniformly on a nonconducting optical sapphire substrate. Direct electrical contact to the nanowires is uniquely provided by a self-assembled underlying In2O3 buffer layer formed in-situ during the nanowire growth. A controlled time-resolved growth study reveals dynamic simultaneous nucleation and epitaxial growth events, driven by two competitive growth mechanisms. Based on the nanowire-integrated platform, a depletion mode n-channel VFET with an In2O3 nanowire constituting the active channel is fabricated. Our unique vertical device architecture could potentially lead to tera-level ultrahigh-density nanoscale electronic, and optoelectronic devices.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl0498536