Electron−Phonon Coupling and Localization of Excitons in Single Silicon Nanocrystals

We report a detailed photoluminescence (PL) study on single silicon nanocrystals produced by laser pyrolysis. The PL spectra reveal nearly homogeneously broadened zero-phonon lines coupled to Si−O−Si phonon transitions in the SiO2 shell. A systematic investigation of electron−phonon coupling is repo...

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Bibliographic Details
Published in:Nano letters 2008-02, Vol.8 (2), p.656-660
Main Authors: Martin, Jörg, Cichos, Frank, Huisken, Friedrich, von Borczyskowski, Christian
Format: Article
Language:English
Subjects:
Computer Simulation
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electric Conductivity
Electron states
Electron Transport
Electrons
Exact sciences and technology
Excitons and related phenomena
Laser-assisted deposition
Light
Materials science
Materials Testing
Methods of nanofabrication
Models, Chemical
Nanocrystalline materials
Nanocrystals and nanoparticles
Nanoscale materials and structures: fabrication and characterization
Nanostructures - chemistry
Nanotechnology - methods
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Particle Size
Photons
Physics
Radiation Dosage
Silicon - chemistry
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Summary:We report a detailed photoluminescence (PL) study on single silicon nanocrystals produced by laser pyrolysis. The PL spectra reveal nearly homogeneously broadened zero-phonon lines coupled to Si−O−Si phonon transitions in the SiO2 shell. A systematic investigation of electron−phonon coupling is reported on the basis of single nanocrystals. The stepwise localization of electron and hole at the Si−SiO2 interface for nanocrystals smaller than d ≈ 2.7 nm is driven by electron−phonon coupling. From the localization energies the effective Bohr radii of the (localized) electron and hole are estimated to be in the range of 1−2 bond lengths of Si−O and Si−Si.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl0731163