Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO 2 Resistive Memory on Silicon

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Bibliographic Details
Published in:Nano letters 2014-08, Vol.14 (8), p.4360-4367
Main Authors: Hu, Chengqing, McDaniel, Martin D., Posadas, Agham, Demkov, Alexander A., Ekerdt, John G., Yu, Edward T.
Format: Article
Language:English
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ISSN:1530-6984
1530-6992
DOI:10.1021/nl501249q