Resistive switching dependence on atomic layer deposition parameters in HfO 2 -based memory devices

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2014, Vol.2 (17), p.3204-3211
Main Authors: Zazpe, Raúl, Ungureanu, Mariana, Golmar, Federico, Stoliar, Pablo, Llopis, Roger, Casanova, Fèlix, Pickup, David F., Rogero, Celia, Hueso, Luis E.
Format: Article
Language:English
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ISSN:2050-7526
2050-7534
DOI:10.1039/C3TC31819B