Condensation of vapor species at the outlets in high temperature chemical vapor deposition using tetramethylsilane as a precursor for SiC bulk growth

High temperature chemical vapor deposition (HTCVD), an alternate method for crystal growth of SiC, was recently deemed to be a safe method when tetramethylsilane (TMS) is used. In this study, we report on the characteristics of condensation of vapor species as a function of geometric location and te...

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Bibliographic Details
Published in:CrystEngComm 2015-01, Vol.17 (16), p.3148-3152
Main Authors: Kim, Byeong Geun, Yoon, Ji-Young, Yoo, Chang-Hyoung, Nam, Deok-Hui, Lee, Myung-Hyun, Seo, Won-Seon, Jeong, Seong-Min
Format: Article
Language:English
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Summary:High temperature chemical vapor deposition (HTCVD), an alternate method for crystal growth of SiC, was recently deemed to be a safe method when tetramethylsilane (TMS) is used. In this study, we report on the characteristics of condensation of vapor species as a function of geometric location and temperature by analyzing outlet closing in TMS-based HTCVD under the conditions of 2000 °C for 1-2 hours with a Si/H ratio of 6.2 × 10 −4 . Thermodynamic estimation of the classified reaction zones was experimentally verified by micro-Raman spectroscopy and microscopic inspections. The characteristics of condensation of vapor species were analyzed with the outlet closing issue in the HTCVD method using tetramethylsilane for crystal growth of SiC.
ISSN:1466-8033
1466-8033
DOI:10.1039/c4ce02472a