Synthesis, characterization and field-effect transistor performance of a benzoannulated pentathienoacene derivative

• Published in: New journal of chemistry 2015-01, Vol.39 (2), p.145-15
• Main Authors: Qi, Xiangye, Zou, Sufen, Liu, Xiaoxia, Hao, Wanglong, Zhang, Huarong, Zang, Zhanzhan, Zhang, Haixia, Gao, Jianhua, Hu, Wenping
• Format: Article
• Language: English
• ISSN: 1144-0546; 1369-9261
• DOI: 10.1039/c4nj01590h

A novel benzoannulated pentathienoacene derivative dihexyl-[1]benzothieno[2′′,3′′:4′,5′]thieno[2′′,3′′:4,5;5′′,4′′:4′,5′]bisthieno[3,2- b :3′,2′- b ′][1]benzothiophene was designed and synthesized. UV-vis spectra, electrochemistry and thermogravimetric analysis results reveal that this material has a large energy bandgap, low-lying highest occupied molecular orbital level and good thermal stability. Atomic force microscopy demonstrates that the thin films show high surface roughness and consisted of interconnected sheet-like crystalline grains. A highly ordered aggregation structure in grains was evidenced by X-ray diffraction measurements. Mobility up to 0.04 cm 2 V −1 s −1 and an on/off ratio over 10 5 were achieved for the thin film field-effect transistors. These results suggest that this new benzoannulated pentathienoacene derivative is an important member of the thienoacene family and will contribute to a comprehensive analysis of the structure-property relationship of the thienoacene analogue. A new dihexyl-substituted thienoacene derivative exhibits high stability and a mobility of 0.04 cm 2 V −1 s −1 based on its thin film transistors.