Multi-level control of conductive nano-filament evolution in HfO 2 ReRAM by pulse-train operations

Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By ap...

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Bibliographic Details
Published in:Nanoscale 2014-06, Vol.6 (11), p.5698-5702
Main Authors: Zhao, L., Chen, H.-Y., Wu, S.-C., Jiang, Z., Yu, S., Hou, T.-H., Wong, H.-S. Philip, Nishi, Y.
Format: Article
Language:English
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Summary:Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO 2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.
ISSN:2040-3364
2040-3372
DOI:10.1039/C4NR00500G