High-quality, large-area MoSe 2 and MoSe 2 /Bi 2 Se 3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

• Published in: Nanoscale 2015, Vol.7 (17), p.7896-7905
• Main Authors: Xenogiannopoulou, E., Tsipas, P., Aretouli, K. E., Tsoutsou, D., Giamini, S. A., Bazioti, C., Dimitrakopulos, G. P., Komninou, Ph, Brems, S., Huyghebaert, C., Radu, I. P., Dimoulas, A.
• Format: Article
• Language: English
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/C4NR06874B

Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, advanced devices and integrated circuits have already been realized, showing great potential to impact nanoelectronics. Here, high-quality single-crystal MoSe 2 is grown by molecular beam epitaxy on AlN(0001)/Si(111), showing the potential for scaling up growth to low-cost, large-area substrates for mass production. The MoSe 2 layers are epitaxially aligned with the aluminum nitride (AlN) lattice, showing a uniform, smooth surface and interfaces with no reaction or intermixing, and with sufficiently high band offsets. High-quality single-layer MoSe 2 is obtained, with a direct gap evidenced by angle-resolved photoemission spectroscopy and further confirmed by Raman and intense room temperature photoluminescence. The successful growth of high-quality MoSe 2 /Bi 2 Se 3 multilayers on AlN shows promise for novel devices exploiting the non-trivial topological properties of Bi 2 Se 3 .