Demonstration of n-GaN:Si NWs having ultrahigh density and aspect ratio via a 3-step growth method using MOCVD

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Bibliographic Details
Published in:CrystEngComm 2016, Vol.18 (3), p.480-487
Main Authors: Um, Dae-Young, Mandal, Arjun, Lee, Da-Som, Park, Ji-Hyeon, Lee, Cheul-Ro
Format: Article
Language:English
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ISSN:1466-8033
1466-8033
DOI:10.1039/C5CE01832C