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Efficient band structure tuning, charge separation, and visible-light response in ZrS 2 -based van der Waals heterostructures
As a fast emerging topic, van der Waals heterostructures can modify two-dimensional (2D) layered materials with desired properties, thus greatly extending the applications of these materials. Via state-of-the-art first-principles calculations, we systematically study four types of van der Waals hete...
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Published in: | Energy & environmental science 2016, Vol.9 (3), p.841-849 |
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Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | As a fast emerging topic, van der Waals heterostructures can modify two-dimensional (2D) layered materials with desired properties, thus greatly extending the applications of these materials.
Via
state-of-the-art first-principles calculations, we systematically study four types of van der Waals heterostructures formed by monolayer graphene, h-BN, g-C
3
N
4
, and polyphenylene on ZrS
2
nanosheets. A direct band gap can be obtained in the graphene/ZrS
2
heterostructure, endowing graphene with the real ability to be applied in nanoelectronics, whereas the van der Waals interactions of graphene significantly broadens the optical absorption of ZrS
2
. The conduction band and valence band of the four heterostructures are contributed by the ZrS
2
layer and the other layer, respectively, meaning good charge separation is achieved. We proposed that the strained h-BN/ZrS
2
and g-C
3
N
4
/ZrS
2
heterostructures satisfy fundamental aspects for photocatalytic water splitting, with the reduction and oxidation levels well inside their band gaps. By forming heterostructures with ZrS
2
, the optical properties of h-BN, g-C
3
N
4
and polyphenylene show a remarkable improvement in the visible-light region. The findings in this study will be of broad interest in van der Waals heterostructure research and in the photocatalysis field. |
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ISSN: | 1754-5692 1754-5706 |
DOI: | 10.1039/C5EE03490F |