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Enhanced thermoelectric performance of BiSbTe-based composites incorporated with amorphous Si 3 N 4 nanoparticles
Thermoelectric properties of BiSbTe-based composites dispersed with a small amount (
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Published in: | RSC advances 2015, Vol.5 (43), p.34251-34256 |
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Main Authors: | , , , , , , , , |
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Language: | English |
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container_end_page | 34256 |
container_issue | 43 |
container_start_page | 34251 |
container_title | RSC advances |
container_volume | 5 |
creator | Dou, Y. C. Qin, X. Y. Li, D. Li, Y. Y. Xin, H. X. Zhang, J. Liu, Y. F. Song, C. J. Wang, L. |
description | Thermoelectric properties of BiSbTe-based composites dispersed with a small amount ( |
doi_str_mv | 10.1039/C5RA04428F |
format | article |
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3
N
4
(a-Si
3
N
4
) nanoparticles (∼25 nm) were investigated in the temperature range from 303 K to 483 K. The results indicate that with a-Si
3
N
4
content increasing, the thermopower (
S
) of the a-Si
3
N
4
/BiSbTe composites increases substantially at
T
< ∼370 K, due to the decreased carrier concentrations and the enhanced energy-dependent scattering of the carrier at the heterojunction potential. Simultaneously, a-Si
3
N
4
nanodispersion causes ∼20–30% reduction in thermal conductivity (
κ
) owing to phonon scattering of nanoparticles as well as phase boundaries. As a result, high dimensionless figure of merit (
ZT
) values of up to 1.20 (∼303 K) and 1.38 (∼383 K) are obtained in Bi
0.4
Sb
1.6
Te
3
incorporated with only 0.44 vol% a-Si
3
N
4
nanoparticles, demonstrating that the thermoelectric performance of the BiSbTe alloy can be improved effectively through incorporation of a-Si
3
N
4
nanoparticles.</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/C5RA04428F</identifier><language>eng</language><ispartof>RSC advances, 2015, Vol.5 (43), p.34251-34256</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c76F-df502febeef660017ef58e51aaedc472a767e6af91eabde76c5979587966a7233</citedby><cites>FETCH-LOGICAL-c76F-df502febeef660017ef58e51aaedc472a767e6af91eabde76c5979587966a7233</cites><orcidid>0000-0003-0238-2412</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids></links><search><creatorcontrib>Dou, Y. C.</creatorcontrib><creatorcontrib>Qin, X. Y.</creatorcontrib><creatorcontrib>Li, D.</creatorcontrib><creatorcontrib>Li, Y. Y.</creatorcontrib><creatorcontrib>Xin, H. X.</creatorcontrib><creatorcontrib>Zhang, J.</creatorcontrib><creatorcontrib>Liu, Y. F.</creatorcontrib><creatorcontrib>Song, C. J.</creatorcontrib><creatorcontrib>Wang, L.</creatorcontrib><title>Enhanced thermoelectric performance of BiSbTe-based composites incorporated with amorphous Si 3 N 4 nanoparticles</title><title>RSC advances</title><description>Thermoelectric properties of BiSbTe-based composites dispersed with a small amount (<1 vol%) of amorphous Si
3
N
4
(a-Si
3
N
4
) nanoparticles (∼25 nm) were investigated in the temperature range from 303 K to 483 K. The results indicate that with a-Si
3
N
4
content increasing, the thermopower (
S
) of the a-Si
3
N
4
/BiSbTe composites increases substantially at
T
< ∼370 K, due to the decreased carrier concentrations and the enhanced energy-dependent scattering of the carrier at the heterojunction potential. Simultaneously, a-Si
3
N
4
nanodispersion causes ∼20–30% reduction in thermal conductivity (
κ
) owing to phonon scattering of nanoparticles as well as phase boundaries. As a result, high dimensionless figure of merit (
ZT
) values of up to 1.20 (∼303 K) and 1.38 (∼383 K) are obtained in Bi
0.4
Sb
1.6
Te
3
incorporated with only 0.44 vol% a-Si
3
N
4
nanoparticles, demonstrating that the thermoelectric performance of the BiSbTe alloy can be improved effectively through incorporation of a-Si
3
N
4
nanoparticles.</description><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpNUMFKxDAUDKLgsu7FL8hZqCZpk7THddmqsCi4vZfX9IVG2qYmFfHv7aKgc5lhZpjDEHLN2S1naXG3k69blmUiL8_ISrBMJYKp4vyfviSbGN_YAiW5UHxF3vdjB6PBls4dhsFjj2YOztAJg_VhOGXUW3rvjk2FSQNxqRo_TD66GSN1o_Fh8gHmxf90c0dhWIzOf0R6dDSlzzSjI4x-gjA702O8IhcW-oibX16TqtxXu8fk8PLwtNseEqNVmbRWMmGxQbRKMcY1Wpmj5ADYmkwL0EqjAltwhKZFrYwsdCFzXSgFWqTpmtz8zJrgYwxo6ym4AcJXzVl9uqv-uyv9BqQlXuU</recordid><startdate>2015</startdate><enddate>2015</enddate><creator>Dou, Y. C.</creator><creator>Qin, X. Y.</creator><creator>Li, D.</creator><creator>Li, Y. Y.</creator><creator>Xin, H. X.</creator><creator>Zhang, J.</creator><creator>Liu, Y. F.</creator><creator>Song, C. J.</creator><creator>Wang, L.</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-0238-2412</orcidid></search><sort><creationdate>2015</creationdate><title>Enhanced thermoelectric performance of BiSbTe-based composites incorporated with amorphous Si 3 N 4 nanoparticles</title><author>Dou, Y. C. ; Qin, X. Y. ; Li, D. ; Li, Y. Y. ; Xin, H. X. ; Zhang, J. ; Liu, Y. F. ; Song, C. J. ; Wang, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c76F-df502febeef660017ef58e51aaedc472a767e6af91eabde76c5979587966a7233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dou, Y. C.</creatorcontrib><creatorcontrib>Qin, X. Y.</creatorcontrib><creatorcontrib>Li, D.</creatorcontrib><creatorcontrib>Li, Y. Y.</creatorcontrib><creatorcontrib>Xin, H. X.</creatorcontrib><creatorcontrib>Zhang, J.</creatorcontrib><creatorcontrib>Liu, Y. F.</creatorcontrib><creatorcontrib>Song, C. J.</creatorcontrib><creatorcontrib>Wang, L.</creatorcontrib><collection>CrossRef</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dou, Y. C.</au><au>Qin, X. Y.</au><au>Li, D.</au><au>Li, Y. Y.</au><au>Xin, H. X.</au><au>Zhang, J.</au><au>Liu, Y. F.</au><au>Song, C. J.</au><au>Wang, L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced thermoelectric performance of BiSbTe-based composites incorporated with amorphous Si 3 N 4 nanoparticles</atitle><jtitle>RSC advances</jtitle><date>2015</date><risdate>2015</risdate><volume>5</volume><issue>43</issue><spage>34251</spage><epage>34256</epage><pages>34251-34256</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>Thermoelectric properties of BiSbTe-based composites dispersed with a small amount (<1 vol%) of amorphous Si
3
N
4
(a-Si
3
N
4
) nanoparticles (∼25 nm) were investigated in the temperature range from 303 K to 483 K. The results indicate that with a-Si
3
N
4
content increasing, the thermopower (
S
) of the a-Si
3
N
4
/BiSbTe composites increases substantially at
T
< ∼370 K, due to the decreased carrier concentrations and the enhanced energy-dependent scattering of the carrier at the heterojunction potential. Simultaneously, a-Si
3
N
4
nanodispersion causes ∼20–30% reduction in thermal conductivity (
κ
) owing to phonon scattering of nanoparticles as well as phase boundaries. As a result, high dimensionless figure of merit (
ZT
) values of up to 1.20 (∼303 K) and 1.38 (∼383 K) are obtained in Bi
0.4
Sb
1.6
Te
3
incorporated with only 0.44 vol% a-Si
3
N
4
nanoparticles, demonstrating that the thermoelectric performance of the BiSbTe alloy can be improved effectively through incorporation of a-Si
3
N
4
nanoparticles.</abstract><doi>10.1039/C5RA04428F</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-0238-2412</orcidid></addata></record> |
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title | Enhanced thermoelectric performance of BiSbTe-based composites incorporated with amorphous Si 3 N 4 nanoparticles |
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