Remarkable stability of unmodified GaAs photocathodes during hydrogen evolution in acidic electrolyte

We report on the remarkable stability of unmodified, epitaxially grown GaAs photocathodes during hydrogen evolution at −15 mA cm −2 in 3 M sulfuric acid electrolyte. Contrary to the perception regarding instability of III-V photoelectrodes, results here show virtually no performance degradation and...

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Bibliographic Details
Published in:Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2016-01, Vol.4 (8), p.2831-2836
Main Authors: Young, J. L, Steirer, K. X, Dzara, M. J, Turner, J. A, Deutsch, T. G
Format: Article
Language:English
Subjects:
Electrolytes
Epitaxial growth
Etching
Gallium arsenide
Hydrogen evolution
NANOSCIENCE AND NANOTECHNOLOGY
Perception
Photocathodes
photoelectrochemical water splitting
semiconductor photocorrosion
SOLAR ENERGY
Stability
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Summary:We report on the remarkable stability of unmodified, epitaxially grown GaAs photocathodes during hydrogen evolution at −15 mA cm −2 in 3 M sulfuric acid electrolyte. Contrary to the perception regarding instability of III-V photoelectrodes, results here show virtually no performance degradation and minimal etching after 120 hours. GaAs photocathodes are intrinsically stabilized by surface As during hydrogen evolution at −15 mA cm −2 in acid; etching at
ISSN:2050-7488
2050-7496
DOI:10.1039/c5ta07648j