Ultrahigh sensitivity in the amorphous ZnSnO UV photodetector

An ultraviolet (UV) photodetector based on amorphous ZnSnO (α-ZTO) channel thin-film transistors (TFTs) with ultrahigh sensitivity was fabricated by a simple sol-gel method. The photodetectors are investigated at various intensities of 365 nm UV illumination, which exhibit ultrahigh sensitivity and...

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Bibliographic Details
Published in:RSC advances 2016-01, Vol.6 (39), p.32715-3272
Main Authors: Wang, Weihao, Pan, Xinhua, Dai, Wen, Zeng, Yiyu, Ye, Zhizhen
Format: Article
Language:English
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Summary:An ultraviolet (UV) photodetector based on amorphous ZnSnO (α-ZTO) channel thin-film transistors (TFTs) with ultrahigh sensitivity was fabricated by a simple sol-gel method. The photodetectors are investigated at various intensities of 365 nm UV illumination, which exhibit ultrahigh sensitivity and responsivity. A reasonable mechanism is proposed for the superior UV detecting performance. Moreover, our device is promising for UV detection under weak UV illumination. The fabrication of the α-ZTO UV photodetector represents a significant step toward future multifunctional optoelectronic applications. An ultraviolet photodetector based on α-ZTO exhibits ultrahigh sensitivity and good performance due to the TFTs structure.
ISSN:2046-2069
2046-2069
DOI:10.1039/c6ra02924h