Domain switching contribution to the ferroelectric, fatigue and piezoelectric properties of lead-free Bi 0.5 (Na 0.85 K 0.15 ) 0.5 TiO 3 films

Lead-free Bi 0.5 (Na 0.85 K 0.15 ) 0.5 TiO 3 films have been prepared via a solution-gelation technique. The microstructure, domain structure, ferroelectric, fatigue and piezoelectric properties were investigated systematically. This shows that the films have a single-phase perovskite structure and...

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Bibliographic Details
Published in:RSC advances 2016, Vol.6 (40), p.33834-33842
Main Authors: Chen, Jieyu, Tang, Zhehong, Tian, Ruonan, Bai, Yulong, Zhao, Shifeng, Zhang, Hao
Format: Article
Language:English
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Summary:Lead-free Bi 0.5 (Na 0.85 K 0.15 ) 0.5 TiO 3 films have been prepared via a solution-gelation technique. The microstructure, domain structure, ferroelectric, fatigue and piezoelectric properties were investigated systematically. This shows that the films have a single-phase perovskite structure and show outstanding ferroelectric, fatigue and piezoelectric properties at room temperature. The maximum piezoelectric coefficient value of the films reaches approximately 158.94 pm V −1 , which is comparable to that of polycrystalline lead-based films. Thus good ferroelectric, fatigue and piezoelectric properties are attributed to the well-defined electrical domain structure and its switching for Bi 0.5 (Na 0.85 K 0.15 ) 0.5 TiO 3 films. The present results suggest that Bi 0.5 (Na 0.85 K 0.15 ) 0.5 TiO 3 films can be used as a candidate for lead-free films in piezoelectric micro-electro-mechanical systems.
ISSN:2046-2069
2046-2069
DOI:10.1039/C6RA04262G