Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes

We report the fabrication of Ni 2.7 Mn 0.9 Ga 0.4 /InGaAs bilayers on GaAs (001)/InGaAs substrates by molecular beam epitaxy. To form freestanding microtubes the bilayers have been released from the substrate by strain engineering. Microtubes with up to three windings have been successfully realized...

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Bibliographic Details
Published in:RSC advances 2016-01, Vol.6 (76), p.72568-72574
Main Authors: Müller, C, Neckel, I, Monecke, M, Dzhagan, V, Salvan, G, Schulze, S, Baunack, S, Gemming, T, Oswald, S, Engemaier, V, Mosca, D. H
Format: Article
Language:English
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Summary:We report the fabrication of Ni 2.7 Mn 0.9 Ga 0.4 /InGaAs bilayers on GaAs (001)/InGaAs substrates by molecular beam epitaxy. To form freestanding microtubes the bilayers have been released from the substrate by strain engineering. Microtubes with up to three windings have been successfully realized by tailoring the size and strain of the bilayer. The structure and magnetic properties of both, the initial films and the rolled-up microtubes, are investigated by electron microscopy, X-ray techniques and magnetization measurements. A tetragonal lattice with c / a = 2.03 (film) and c / a = 2.01 (tube) is identified for the Ni 2.7 Mn 0.9 Ga 0.4 alloy. Furthermore, a significant influence of the cylindrical geometry and strain relaxation induced by roll-up on the magnetic properties of the tube is found. NiMnGa/InGaAs nanomembranes grown by epitaxy on semiconductor substrates are transformed into freestanding microtubes using self assembly techniques and are investigated.
ISSN:2046-2069
2046-2069
DOI:10.1039/c6ra13684b