Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes

We report the fabrication of Ni 2.7 Mn 0.9 Ga 0.4 /InGaAs bilayers on GaAs (001)/InGaAs substrates by molecular beam epitaxy. To form freestanding microtubes the bilayers have been released from the substrate by strain engineering. Microtubes with up to three windings have been successfully realized...

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Published in:RSC advances 2016-01, Vol.6 (76), p.72568-72574
Main Authors: Müller, C, Neckel, I, Monecke, M, Dzhagan, V, Salvan, G, Schulze, S, Baunack, S, Gemming, T, Oswald, S, Engemaier, V, Mosca, D. H
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cited_by cdi_FETCH-LOGICAL-c315t-3c9c8c2dc61366278676d22733abecfe867dfd94a716aa14c225607c3c20e4d63
cites cdi_FETCH-LOGICAL-c315t-3c9c8c2dc61366278676d22733abecfe867dfd94a716aa14c225607c3c20e4d63
container_end_page 72574
container_issue 76
container_start_page 72568
container_title RSC advances
container_volume 6
creator Müller, C
Neckel, I
Monecke, M
Dzhagan, V
Salvan, G
Schulze, S
Baunack, S
Gemming, T
Oswald, S
Engemaier, V
Mosca, D. H
description We report the fabrication of Ni 2.7 Mn 0.9 Ga 0.4 /InGaAs bilayers on GaAs (001)/InGaAs substrates by molecular beam epitaxy. To form freestanding microtubes the bilayers have been released from the substrate by strain engineering. Microtubes with up to three windings have been successfully realized by tailoring the size and strain of the bilayer. The structure and magnetic properties of both, the initial films and the rolled-up microtubes, are investigated by electron microscopy, X-ray techniques and magnetization measurements. A tetragonal lattice with c / a = 2.03 (film) and c / a = 2.01 (tube) is identified for the Ni 2.7 Mn 0.9 Ga 0.4 alloy. Furthermore, a significant influence of the cylindrical geometry and strain relaxation induced by roll-up on the magnetic properties of the tube is found. NiMnGa/InGaAs nanomembranes grown by epitaxy on semiconductor substrates are transformed into freestanding microtubes using self assembly techniques and are investigated.
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fullrecord <record><control><sourceid>rsc_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1039_C6RA13684B</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>c6ra13684b</sourcerecordid><originalsourceid>FETCH-LOGICAL-c315t-3c9c8c2dc61366278676d22733abecfe867dfd94a716aa14c225607c3c20e4d63</originalsourceid><addsrcrecordid>eNp9kEtLAzEQx4MoWGov3oV4Fdbmsc12j3XRWqgKUs_LbB4l0k1KkqJ-e2Mr6sk5zIP5zQzzR-ickmtKeD2WIgDlYlp2R2jASCkKRkR9_Cc_RaMYX0k2MaFM0AHqVwFcND70kKx32BustzbBu4UNfrQPbg7jRXaziB043-u-ywM64nXwbxl3eN-Luy6mACk3rEsem6B1TOCUdWvcWxl82nU6nqETA5uoR99xiF7ublfNfbF8mi-a2bKQnE5SwWUtp5IpKfI7glVTUQnFWMU5dFoanWtlVF1CRQUALSVjE0EqySUjulSCD9HVYW8-HGPQpt0G20P4aClpv7RqG_E822t1k-HLAxyi_OF-tWy3ymTm4j-GfwKz1XNJ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes</title><source>Royal Society of Chemistry:Jisc Collections:Royal Society of Chemistry Read and Publish 2022-2024 (reading list)</source><creator>Müller, C ; Neckel, I ; Monecke, M ; Dzhagan, V ; Salvan, G ; Schulze, S ; Baunack, S ; Gemming, T ; Oswald, S ; Engemaier, V ; Mosca, D. H</creator><creatorcontrib>Müller, C ; Neckel, I ; Monecke, M ; Dzhagan, V ; Salvan, G ; Schulze, S ; Baunack, S ; Gemming, T ; Oswald, S ; Engemaier, V ; Mosca, D. H</creatorcontrib><description>We report the fabrication of Ni 2.7 Mn 0.9 Ga 0.4 /InGaAs bilayers on GaAs (001)/InGaAs substrates by molecular beam epitaxy. To form freestanding microtubes the bilayers have been released from the substrate by strain engineering. Microtubes with up to three windings have been successfully realized by tailoring the size and strain of the bilayer. The structure and magnetic properties of both, the initial films and the rolled-up microtubes, are investigated by electron microscopy, X-ray techniques and magnetization measurements. A tetragonal lattice with c / a = 2.03 (film) and c / a = 2.01 (tube) is identified for the Ni 2.7 Mn 0.9 Ga 0.4 alloy. Furthermore, a significant influence of the cylindrical geometry and strain relaxation induced by roll-up on the magnetic properties of the tube is found. NiMnGa/InGaAs nanomembranes grown by epitaxy on semiconductor substrates are transformed into freestanding microtubes using self assembly techniques and are investigated.</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/c6ra13684b</identifier><language>eng</language><ispartof>RSC advances, 2016-01, Vol.6 (76), p.72568-72574</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c315t-3c9c8c2dc61366278676d22733abecfe867dfd94a716aa14c225607c3c20e4d63</citedby><cites>FETCH-LOGICAL-c315t-3c9c8c2dc61366278676d22733abecfe867dfd94a716aa14c225607c3c20e4d63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Müller, C</creatorcontrib><creatorcontrib>Neckel, I</creatorcontrib><creatorcontrib>Monecke, M</creatorcontrib><creatorcontrib>Dzhagan, V</creatorcontrib><creatorcontrib>Salvan, G</creatorcontrib><creatorcontrib>Schulze, S</creatorcontrib><creatorcontrib>Baunack, S</creatorcontrib><creatorcontrib>Gemming, T</creatorcontrib><creatorcontrib>Oswald, S</creatorcontrib><creatorcontrib>Engemaier, V</creatorcontrib><creatorcontrib>Mosca, D. H</creatorcontrib><title>Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes</title><title>RSC advances</title><description>We report the fabrication of Ni 2.7 Mn 0.9 Ga 0.4 /InGaAs bilayers on GaAs (001)/InGaAs substrates by molecular beam epitaxy. To form freestanding microtubes the bilayers have been released from the substrate by strain engineering. Microtubes with up to three windings have been successfully realized by tailoring the size and strain of the bilayer. The structure and magnetic properties of both, the initial films and the rolled-up microtubes, are investigated by electron microscopy, X-ray techniques and magnetization measurements. A tetragonal lattice with c / a = 2.03 (film) and c / a = 2.01 (tube) is identified for the Ni 2.7 Mn 0.9 Ga 0.4 alloy. Furthermore, a significant influence of the cylindrical geometry and strain relaxation induced by roll-up on the magnetic properties of the tube is found. NiMnGa/InGaAs nanomembranes grown by epitaxy on semiconductor substrates are transformed into freestanding microtubes using self assembly techniques and are investigated.</description><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEQx4MoWGov3oV4Fdbmsc12j3XRWqgKUs_LbB4l0k1KkqJ-e2Mr6sk5zIP5zQzzR-ickmtKeD2WIgDlYlp2R2jASCkKRkR9_Cc_RaMYX0k2MaFM0AHqVwFcND70kKx32BustzbBu4UNfrQPbg7jRXaziB043-u-ywM64nXwbxl3eN-Luy6mACk3rEsem6B1TOCUdWvcWxl82nU6nqETA5uoR99xiF7ublfNfbF8mi-a2bKQnE5SwWUtp5IpKfI7glVTUQnFWMU5dFoanWtlVF1CRQUALSVjE0EqySUjulSCD9HVYW8-HGPQpt0G20P4aClpv7RqG_E822t1k-HLAxyi_OF-tWy3ymTm4j-GfwKz1XNJ</recordid><startdate>20160101</startdate><enddate>20160101</enddate><creator>Müller, C</creator><creator>Neckel, I</creator><creator>Monecke, M</creator><creator>Dzhagan, V</creator><creator>Salvan, G</creator><creator>Schulze, S</creator><creator>Baunack, S</creator><creator>Gemming, T</creator><creator>Oswald, S</creator><creator>Engemaier, V</creator><creator>Mosca, D. H</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20160101</creationdate><title>Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes</title><author>Müller, C ; Neckel, I ; Monecke, M ; Dzhagan, V ; Salvan, G ; Schulze, S ; Baunack, S ; Gemming, T ; Oswald, S ; Engemaier, V ; Mosca, D. H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c315t-3c9c8c2dc61366278676d22733abecfe867dfd94a716aa14c225607c3c20e4d63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Müller, C</creatorcontrib><creatorcontrib>Neckel, I</creatorcontrib><creatorcontrib>Monecke, M</creatorcontrib><creatorcontrib>Dzhagan, V</creatorcontrib><creatorcontrib>Salvan, G</creatorcontrib><creatorcontrib>Schulze, S</creatorcontrib><creatorcontrib>Baunack, S</creatorcontrib><creatorcontrib>Gemming, T</creatorcontrib><creatorcontrib>Oswald, S</creatorcontrib><creatorcontrib>Engemaier, V</creatorcontrib><creatorcontrib>Mosca, D. H</creatorcontrib><collection>CrossRef</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Müller, C</au><au>Neckel, I</au><au>Monecke, M</au><au>Dzhagan, V</au><au>Salvan, G</au><au>Schulze, S</au><au>Baunack, S</au><au>Gemming, T</au><au>Oswald, S</au><au>Engemaier, V</au><au>Mosca, D. H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes</atitle><jtitle>RSC advances</jtitle><date>2016-01-01</date><risdate>2016</risdate><volume>6</volume><issue>76</issue><spage>72568</spage><epage>72574</epage><pages>72568-72574</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>We report the fabrication of Ni 2.7 Mn 0.9 Ga 0.4 /InGaAs bilayers on GaAs (001)/InGaAs substrates by molecular beam epitaxy. To form freestanding microtubes the bilayers have been released from the substrate by strain engineering. Microtubes with up to three windings have been successfully realized by tailoring the size and strain of the bilayer. The structure and magnetic properties of both, the initial films and the rolled-up microtubes, are investigated by electron microscopy, X-ray techniques and magnetization measurements. A tetragonal lattice with c / a = 2.03 (film) and c / a = 2.01 (tube) is identified for the Ni 2.7 Mn 0.9 Ga 0.4 alloy. Furthermore, a significant influence of the cylindrical geometry and strain relaxation induced by roll-up on the magnetic properties of the tube is found. NiMnGa/InGaAs nanomembranes grown by epitaxy on semiconductor substrates are transformed into freestanding microtubes using self assembly techniques and are investigated.</abstract><doi>10.1039/c6ra13684b</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record>
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title Transformation of epitaxial NiMnGa/InGaAs nanomembranes grown on GaAs substrates into freestanding microtubes
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T10%3A20%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-rsc_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Transformation%20of%20epitaxial%20NiMnGa/InGaAs%20nanomembranes%20grown%20on%20GaAs%20substrates%20into%20freestanding%20microtubes&rft.jtitle=RSC%20advances&rft.au=M%C3%BCller,%20C&rft.date=2016-01-01&rft.volume=6&rft.issue=76&rft.spage=72568&rft.epage=72574&rft.pages=72568-72574&rft.issn=2046-2069&rft.eissn=2046-2069&rft_id=info:doi/10.1039/c6ra13684b&rft_dat=%3Crsc_cross%3Ec6ra13684b%3C/rsc_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c315t-3c9c8c2dc61366278676d22733abecfe867dfd94a716aa14c225607c3c20e4d63%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true