Spatial control of direct chemical vapor deposition of graphene on silicon dioxide by directional copper dewetting

In this paper we present a method for the spatial control of direct graphene synthesis onto silicon dioxide by controlled dewetting. The dewetting process is controlled through a combination of using a grooved substrate and conducting copper deposition at an angle. The substrate is then treated usin...

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Bibliographic Details
Published in:RSC advances 2016-01, Vol.6 (92), p.8938-89386
Main Authors: van den Beld, Wesley T. E, van den Berg, Albert, Eijkel, Jan C. T
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Copper
Deposition
Dewetting
Graphene
Grooves
Silicon dioxide
Substrates
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Summary:In this paper we present a method for the spatial control of direct graphene synthesis onto silicon dioxide by controlled dewetting. The dewetting process is controlled through a combination of using a grooved substrate and conducting copper deposition at an angle. The substrate is then treated using a typical graphene chemical vapor deposition synthesis process at an elevated temperature during which directional dewetting of the copper into the grooves occurs while graphene is deposited at the mesas in between the grooves. The dewetting process and the synthesized graphene layer are characterized. The method is a non-manual, controllable and wafer-scale process, and therefore opens new possibilities for the construction of functional devices such as e.g. transistors. A non-manual, controllable and wafer-scale method for the spatial control of direct graphene synthesis onto silicon dioxide by controlled dewetting and evaporation of copper.
ISSN:2046-2069
2046-2069
DOI:10.1039/c6ra16935j