High-efficiency deep-red quantum-dot light-emitting diodes with type-II CdSe/CdTe core/shell quantum dots as emissive layers

We report a type of highly efficient deep-red light-emitting diode based on type-II CdTe/CdSe core/shell quantum dots (QDs). High-quality CdTe/CdSe core/shell QDs with three different photoluminescence emissions peaked at 642, 664 and 689 nm are, respectively, synthesized through a green process. Co...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2016-01, Vol.4 (3), p.7223-7229
Main Authors: Lin, Qingli, Song, Bin, Wang, Hongzhe, Zhang, Fengjuan, Chen, Fei, Wang, Lei, Li, Lin Song, Guo, Fang, Shen, Huaibin
Format: Article
Language:English
Subjects:
Cadmium selenides
Cadmium tellurides
Electric potential
Intermetallics
Light-emitting diodes
Luminance
Quantum dots
Voltage
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Summary:We report a type of highly efficient deep-red light-emitting diode based on type-II CdTe/CdSe core/shell quantum dots (QDs). High-quality CdTe/CdSe core/shell QDs with three different photoluminescence emissions peaked at 642, 664 and 689 nm are, respectively, synthesized through a green process. Correspondingly, three devices employing QDs with different PL peaks show the maximum external quantum efficiency (EQE) of 5.24%, 5.74% and 6.19% with a low turn-on voltage of about 1.8 V, respectively. Interestingly, EQE is kept above 5% in a certain range of luminance (from 10 1 to 10 3 cd m −2 ). To our knowledge, this is the first report that uses type-II core/shell QDs as deep-red emitters and these results may offer a practicable reference for applications that require a high efficiency deep-red illuminant. Highly efficient deep-red light-emitting diodes (LEDs) fabricated by using type-II CdTe/CdSe quantum dots.
ISSN:2050-7526
2050-7534
DOI:10.1039/c6tc01531j