Luminescent YbVO 4 by atomic layer deposition

UV to visible and near-infrared converting thin films of YbVO have been deposited by atomic layer deposition, using the precursor combinations Yb(thd) (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and O , and VO(thd) and O at a deposition temperature of 240 °C, followed by post deposition annealing a...

Full description

Saved in:
Bibliographic Details
Published in:Dalton transactions : an international journal of inorganic chemistry 2017-02, Vol.46 (9), p.3008-3013
Main Authors: Getz, Michael, Hansen, Per-Anders, Ahmed, Mohammed A K, Fjellvåg, Helmer, Nilsen, Ola
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:UV to visible and near-infrared converting thin films of YbVO have been deposited by atomic layer deposition, using the precursor combinations Yb(thd) (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and O , and VO(thd) and O at a deposition temperature of 240 °C, followed by post deposition annealing at 400-1000 °C. The UV absorption and the visible and near-infrared emission have been investigated in detail. The structure, thickness and composition of the deposited films have been studied by X-ray diffraction, ellipsometry, and X-ray fluorescence, respectively. The optimal pulse ratio of Yb(thd) and VO(thd) with respect to near-infrared emission was found to be 1 : 3, which also yielded the most crystalline sample after annealing. Crystallization of the films is accelerated when an excess of V O is present, enabling crystallization at temperatures as low as 500 °C, probably through a flux aided process.
ISSN:1477-9226
1477-9234
DOI:10.1039/c7dt00253j