Solution-processed Er 3+ -doped As 3 S 7 chalcogenide films: optical properties and 1.5 μm photoluminescence activated by thermal treatment

• Published in: Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2017, Vol.5 (33), p.8489-8497
• Main Authors: Strizik, L., Wagner, T., Weissova, V., Oswald, J., Palka, K., Benes, L., Krbal, M., Jambor, R., Koughia, C., Kasap, S. O.
• Format: Article
• Language: English
• ISSN: 2050-7526; 2050-7534
• DOI: 10.1039/C7TC02609A

We report on the optical properties of Er-doped As 3 S 7 chalcogenide films prepared using the two step dissolution process utilizing the As 3 S 7 glass dissolved with propylamine and by further addition of the tris(8-hydroxyquinolinato)erbium( iii ) (ErQ) complex acting as an Er 3+ precursor. Thin films were deposited by spin-coating, thermally stabilized by annealing at 125 °C and further post-annealed at 200 or 300 °C. The post-annealing of films at 200 °C and 300 °C densifies the films, improves their optical homogeneity, and moreover activates the Er 3+ : 4 I 13/2 → 4 I 15/2 ( λ ≈ 1.5 μm) PL emission at pumping wavelengths of 808 and 980 nm. The highest PL emission intensity was achieved for As 3 S 7 films post-annealed at 300 °C and doped with ≈1 at% of Er which is beyond the normal Er 3+ solubility limit of As–S melt-quenched glasses. The solution-processed deposition of the rare-earth-doped chalcogenide films utilizing the organolanthanide precursors has much potential for application in printed flexible optoelectronics and photonics.