Enhanced performance of a graphene/GaAs self-driven near-infrared photodetector with upconversion nanoparticles

Near-infrared photodetectors (NIRPDs) have attracted great attention because of their wide range of applications in many fields. Herein, a novel self-driven NIRPD at the wavelength of 980 nm is reported based on the graphene/GaAs heterostructure. Extraordinarily, its sensitivity to light illuminatio...

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Bibliographic Details
Published in:Nanoscale 2018-05, Vol.1 (17), p.823-83
Main Authors: Wu, Jianghong, Yang, Zhenwei, Qiu, Caiyu, Zhang, Yuejiao, Wu, Zhiqian, Yang, Jingliang, Lu, Yanghua, Li, Jianfeng, Yang, Dongxiao, Hao, Ran, Li, Erping, Yu, Geliang, Lin, Shisheng
Format: Article
Language:English
Subjects:
Electric contacts
Erbium
Gallium arsenide
Graphene
Heterojunctions
Light
Nanoparticles
Optoelectronic devices
Photoelectric effect
Photoelectric emission
Photometers
Upconversion
Ytterbium
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Summary:Near-infrared photodetectors (NIRPDs) have attracted great attention because of their wide range of applications in many fields. Herein, a novel self-driven NIRPD at the wavelength of 980 nm is reported based on the graphene/GaAs heterostructure. Extraordinarily, its sensitivity to light illumination (980 nm) is far beyond the absorption limitation of GaAs (874 nm). This means that the photocurrent originates from the separation of photo-induced carriers in graphene, which is caused by the vertically built-in electric field formed through the high quality van der Waals contact between graphene and GaAs. Moreover, after introducing NaYF 4 :Yb 3+ /Er 3+ upconversion nanoparticles (UCNPs) onto the graphene/GaAs heterojunction, the responsivity increases to be as superior as 5.97 mA W −1 and the corresponding detectivity is 1.1 × 10 11 cm Hz 0.5 W −1 under self-driven conditions. This dramatic improvement is mainly ascribed to the radiative energy transfer from UCNPs to the graphene/GaAs heterostructure. The high-quality and self-driven UCNPs/graphene/GaAs heterostructure NIRPD holds significant potential for practical application in low-consumption and large-scale optoelectronic devices. A high performance near-infrared photodetector is achieved by the graphene/GaAs Schottky junction which can be further improved by coating NaYF 4 :Yb 3+ /Er 3+ nanoparticles.
ISSN:2040-3364
2040-3372
DOI:10.1039/c8nr00594j