Direct observation of quantum tunnelling charge transfers between molecules and semiconductors for SERS

We used high-quality ZnO nanostructures/graphene substrates for understanding the mechanisms of charge transfer (CT) that take place under nonplasmonic conditions. As the optimal conditions for CT processes are found, we studied the range of CT normal to the ZnO surface that is coated with nanoscale...

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Bibliographic Details
Published in:Nanoscale 2018-12, Vol.11 (1), p.45-49
Main Authors: Kim, Nam-Jung, Kim, Jayeong, Park, Jun-Beom, Kim, Hyemin, Yi, Gyu-Chul, Yoon, Seokhyun
Format: Article
Language:English
Subjects:
Charge transfer
Charge transport
Graphene
Hafnium oxide
Nanostructure
Quantum tunnelling
Substrates
Thin films
Zinc oxide
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Summary:We used high-quality ZnO nanostructures/graphene substrates for understanding the mechanisms of charge transfer (CT) that take place under nonplasmonic conditions. As the optimal conditions for CT processes are found, we studied the range of CT normal to the ZnO surface that is coated with nanoscale HfO 2 layers with different thicknesses. We could observe that CT decays over a few nanometers. In addition, we also observed a unique oscillation of the SERS intensity in the atomically thin oxide layers, which reflects the quantum tunneling effects of CT electrons across the oxide layers. To the best of our knowledge, this is the first direct observation of SERS-active charge transport and measurement of a CT span with atomic-scale accuracy. We used high-quality ZnO nanostructures/graphene substrates for understanding the mechanisms of charge transfer (CT) that take place under nonplasmonic conditions. We found that the CT is asymmetric and exhibits a unique oscillating behavior.
ISSN:2040-3364
2040-3372
DOI:10.1039/c8nr08389d