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Water-resistant AgBiS 2 colloidal nanocrystal solids for eco-friendly thin film photovoltaics
Lead-free, water-resistant photovoltaic absorbers are of significant interest for use in environment-friendly and water-stable thin film solar cells. However, there are no reports on the water-resistance characteristics of such photoactive materials. Here, we demonstrate that silver bismuth sulfide...
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Published in: | Nanoscale 2019-05, Vol.11 (19), p.9633-9640 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Lead-free, water-resistant photovoltaic absorbers are of significant interest for use in environment-friendly and water-stable thin film solar cells. However, there are no reports on the water-resistance characteristics of such photoactive materials. Here, we demonstrate that silver bismuth sulfide (AgBiS2) nanocrystal solids exhibit inherent water resistance and can be employed as effective photovoltaic absorbers in all-solid-state thin film solar cells that show outstanding air and moisture stabilities under ambient conditions. The results of X-ray photon spectroscopy (XPS) and X-ray diffraction (XRD) analyses show that there is no change in the chemical composition and crystal structure of the AgBiS2 nanocrystal solids after a water treatment. Based on these results, AgBiS2 nanocrystal solar cells are fabricated. These devices also do not show any drop in performance after a water treatment, confirming that the AgBiS2 nanocrystal solids are indeed highly water-resistant. In contrast, lead sulfide (PbS) colloidal quantum dot (CQD) solar cells show significant decrease in performance after a similar water treatment. Using XPS analysis and density functional theory (DFT) calculations, we confirm that the iodine removal and the surface hydroxylation of the water-treated PbS CQD solids are the primary reasons for the observed decrease in the device performance of the CQD solar cells. |
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ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/c9nr01192g |