Epitaxial graphene/silicon carbide intercalation: a minireview on graphene modulation and unique 2D materials

Intercalation of atomic species through epitaxial graphene on silicon carbide began only a few years following its initial report in 2004. The impact of intercalation on the electronic properties of the graphene is well known; however, the intercalant itself can also exhibit intriguing properties no...

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Bibliographic Details
Published in:Nanoscale 2019-09, Vol.11 (33), p.1544-15447
Main Authors: Briggs, Natalie, Gebeyehu, Zewdu M, Vera, Alexander, Zhao, Tian, Wang, Ke, De La Fuente Duran, Ana, Bersch, Brian, Bowen, Timothy, Knappenberger, Kenneth L, Robinson, Joshua A
Format: Article
Language:English
Subjects:
Epitaxy
Gallium nitrides
Graphene
Intercalation
Modulation
Properties (attributes)
Refractory materials
Refractory metals
Silicon carbide
Silver
Two dimensional materials
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Summary:Intercalation of atomic species through epitaxial graphene on silicon carbide began only a few years following its initial report in 2004. The impact of intercalation on the electronic properties of the graphene is well known; however, the intercalant itself can also exhibit intriguing properties not found in nature. This realization has inspired new interest in epitaxial graphene/silicon carbide (EG/SiC) intercalation, where the scope of the technique extends beyond modulation of graphene properties to the creation of new 2D forms of 3D materials. The mission of this minireview is to provide a concise introduction to EG/SiC intercalation and to demonstrate a simplified approach to EG/SiC intercalation. We summarize the primary techniques used to achieve and characterize EG/SiC intercalation, and show that thermal evaporation-based methods can effectively substitute for more complex synthesis techniques, enabling large-scale intercalation of non-refractory metals and compounds including two-dimensional silver (2D-Ag) and gallium nitride (2D-GaN x ). Intercalation of atomic species through epitaxial graphene on silicon carbide began only a few years following its initial report in 2004.
ISSN:2040-3364
2040-3372
DOI:10.1039/c9nr03721g