Highly stable performance of flexible Hf 0.6 Zr 0.4 O 2 ferroelectric thin films under multi-service conditions

The rapid development of the flexible electronics industry places higher demands on the performance of flexible ferroelectric memories. In practical work, environmental factors such as high temperature, radiation and humidity may also affect the lifetime of flexible devices besides electric field an...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-03, Vol.8 (11), p.3878-3886
Main Authors: Liu, Wen-Yan, Liao, Jia-Jia, Jiang, Jie, Zhou, Yi-Chun, Chen, Qiang, Mo, Sheng-Tao, Yang, Qiong, Peng, Qiang-Xiang, Jiang, Li-Mei
Format: Article
Language:English
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Summary:The rapid development of the flexible electronics industry places higher demands on the performance of flexible ferroelectric memories. In practical work, environmental factors such as high temperature, radiation and humidity may also affect the lifetime of flexible devices besides electric field and bending stress. In this paper, Hf 0.6 Zr 0.4 O 2 (HZO) ferroelectric thin film with excellent ferroelectric properties and high reliability was prepared on flexible mica substrate by atomic layer deposition (ALD). More importantly, the flexible HZO ferroelectric films maintain superior ferroelectricity, retention and fatigue endurance under multiple harsh conditions. On the basis of multi-service conditions, this work marks an important step in the development of new flexible HfO 2 -based ferroelectric memories from fundamental research to practical applications.
ISSN:2050-7526
2050-7534
DOI:10.1039/C9TC05157K