Cobalt doped BiVO 4 with rich oxygen vacancies for efficient photoelectrochemical water oxidation

A facile electrodeposition method was developed to prepare Co-BiVO thin films with rich oxygen vacancies. The resulting photoanode exhibited a photocurrent density of 3.5 mA cm 1.23 V ( reversible hydrogen electrode (RHE), AM 1.5 G), which is over two times higher than that of undoped BiVO .

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Published in:RSC advances 2020-08, Vol.10 (48), p.28523-28526
Main Authors: Liu, Guoquan, Li, Fei, Zhu, Yong, Li, Jiayuan, Sun, Licheng
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Language:English
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creator Liu, Guoquan
Li, Fei
Zhu, Yong
Li, Jiayuan
Sun, Licheng
description A facile electrodeposition method was developed to prepare Co-BiVO thin films with rich oxygen vacancies. The resulting photoanode exhibited a photocurrent density of 3.5 mA cm 1.23 V ( reversible hydrogen electrode (RHE), AM 1.5 G), which is over two times higher than that of undoped BiVO .
doi_str_mv 10.1039/D0RA01961E
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title Cobalt doped BiVO 4 with rich oxygen vacancies for efficient photoelectrochemical water oxidation
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