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Enhancement of the photovoltaic properties of Ag 2 BiI 5 by Cu doping
Cu-doped Ag 2 BiI 5 (Cu:SBI) powders with 0–10 mol% doping concentrations were synthesized by a solid-state method in an evacuated glass tube. While Cu doping did not appreciably modify the crystallographic structure or the bandgap of Ag 2 BiI 5 (SBI), it significantly increased light absorption in...
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Published in: | Sustainable energy & fuels 2021-03, Vol.5 (5), p.1439-1447 |
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Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Cu-doped Ag
2
BiI
5
(Cu:SBI) powders with 0–10 mol% doping concentrations were synthesized by a solid-state method in an evacuated glass tube. While Cu doping did not appreciably modify the crystallographic structure or the bandgap of Ag
2
BiI
5
(SBI), it significantly increased light absorption in the wavelength range of 400–700 nm. They were applied as light absorbers of n–i–p type solar cells employing mesoporous TiO
2
as an electron transporting layer and PTAA as a hole transporting layer, and it was found that Cu doping leads to a notable increase in power conversion efficiency (PCE). Particularly, solar cell devices with 2.5 mol% Cu-doped SBI (SC-Cu2.5:SBI) exhibited a PCE of 2.53% with a
V
OC
of 619 mV,
J
SC
of 7.13 mA cm
−2
and FF of 57.25%, which was increased by 25% compared with that of a bare SBI device (PCE = 2.04%). The PCE increase was mainly due to the significant increase in
J
SC
, suggesting that the enhancement is caused by the increase in light absorption. The effect of Cu dopants on the light absorption properties was investigated by first-principles calculations of energy band structures, and charge transport and recombination behaviors of Cu2.5:SBI were analyzed by transient absorption spectroscopy. Under high humidity conditions, SBI shows much better long-term stability than Pb-perovskites such as methylamine lead iodide, while SC-Cu2.5:SBI shows comparable stability to the bare SBI-based device, implying that Cu doping does not influence the stability of SBI. |
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ISSN: | 2398-4902 2398-4902 |
DOI: | 10.1039/D0SE01563F |