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Effect of lattice mismatch on film morphology of the quasi-one dimensional conductor K 0.3 MoO 3
High quality epitaxial thin films of the quasi-one dimensional conductor K MoO have been successfully grown on SrTiO (100), SrTiO (110), and SrTiO (510) substrates pulsed laser deposition. Scanning electron microscopy revealed quasi-one dimensional rod-shaped structures parallel to the substrate sur...
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Published in: | RSC advances 2022-02, Vol.12 (8), p.4521-4525 |
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creator | Cao, Yifeng Russo, Nicholas Gao, Lei Ji, Ailing Doerrer, Linda H Lu, Nianpeng Smith, Kevin E |
description | High quality epitaxial thin films of the quasi-one dimensional conductor K
MoO
have been successfully grown on SrTiO
(100), SrTiO
(110), and SrTiO
(510) substrates
pulsed laser deposition. Scanning electron microscopy revealed quasi-one dimensional rod-shaped structures parallel to the substrate surface, and the crystal structure was verified by using X-ray diffraction. The temperature dependence of the resistivity for the K
MoO
thin films demonstrates a metal-to-semiconductor transition at about 180 K. Highly anisotropic resistivity was also observed for films grown on SrTiO
(510). |
doi_str_mv | 10.1039/D1RA07842A |
format | article |
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MoO
have been successfully grown on SrTiO
(100), SrTiO
(110), and SrTiO
(510) substrates
pulsed laser deposition. Scanning electron microscopy revealed quasi-one dimensional rod-shaped structures parallel to the substrate surface, and the crystal structure was verified by using X-ray diffraction. The temperature dependence of the resistivity for the K
MoO
thin films demonstrates a metal-to-semiconductor transition at about 180 K. Highly anisotropic resistivity was also observed for films grown on SrTiO
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MoO
have been successfully grown on SrTiO
(100), SrTiO
(110), and SrTiO
(510) substrates
pulsed laser deposition. Scanning electron microscopy revealed quasi-one dimensional rod-shaped structures parallel to the substrate surface, and the crystal structure was verified by using X-ray diffraction. The temperature dependence of the resistivity for the K
MoO
thin films demonstrates a metal-to-semiconductor transition at about 180 K. Highly anisotropic resistivity was also observed for films grown on SrTiO
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MoO
have been successfully grown on SrTiO
(100), SrTiO
(110), and SrTiO
(510) substrates
pulsed laser deposition. Scanning electron microscopy revealed quasi-one dimensional rod-shaped structures parallel to the substrate surface, and the crystal structure was verified by using X-ray diffraction. The temperature dependence of the resistivity for the K
MoO
thin films demonstrates a metal-to-semiconductor transition at about 180 K. Highly anisotropic resistivity was also observed for films grown on SrTiO
(510).</abstract><cop>England</cop><pmid>35425483</pmid><doi>10.1039/D1RA07842A</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-6817-5278</orcidid><orcidid>https://orcid.org/0000-0002-9076-7429</orcidid><orcidid>https://orcid.org/0000-0002-2437-6374</orcidid></addata></record> |
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title | Effect of lattice mismatch on film morphology of the quasi-one dimensional conductor K 0.3 MoO 3 |
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